Researchers from Daegu Gyeongbuk Institute of Science and Technology (DGIST) and University of Cambridge designed dual-modulated vertically stacked transistors in which two gates, positioned above and ...
Abstract: We present a fractional-order generalization of the Bernards–Malliaras model for organic electrochemical transistors (OECTs), extending its applicability to devices with solid or ...
Negative capacitance has the potential to improve GaN device performance and open new possibilities in power electronics and telecommunications. Gallium nitride transistors have rapidly emerged in ...
The first transistors were point contact devices, not far from the cats-whiskers of early radio receivers. They were fragile and expensive, and their performance was not very high. The transistor ...
ABSTRACT: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the ...
Negative capacitance (NC) is primarily used to reduce power dissipation in electronic devices and enable ultra-low power nanoelectronics. By exploiting unique properties in ferroelectric materials, NC ...
“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...
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